Manufacturing method of interconnection structure of semiconduct

Details Manufacturing method of interconnection structure of semiconduct Manufacturing method of interconnection structure of semiconduct

1994-02-07

1995-05-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, 437195, 437200, H01L 2128, H01L 2348

Patent

active

054200709

ABSTRACT:
In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.

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