Manufacturing method of insulated gate field effect transistor u

Details Manufacturing method of insulated gate field effect transistor u Manufacturing method of insulated gate field effect transistor u

1987-02-04

1988-07-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 45, 437157, 437247, 437947, 437982, 148DIG44, 148DIG106, 148DIG157, 148DIG161, 156643, 357 2312, H01L 21223, H01L 21265

Patent

active

047554797

ABSTRACT:
With an increase of integration density in an integrated circuit, the channel length of MIS FET becomes shorter and shorter, which causes a hot carrier effect. To solve the problem, the doping profile of source/drain regions and doping amount must be precisely controlled such that a strong electric field is not generated in a transition region from channel to drain. To obtain this objective, the present invention discloses a method, in which reflowed sidewalls of doped silicate glass having a gentle slope are formed on both sides of a gate electrode, and the gate electrode and the sidewalls thus formed are used as a mask for ion implantation. The depth of ion implantation and the doping amount change gradually from the channel region to the drain region avoiding a generation of the strong electric field and thus alleviates the short channel trouble. The present invention has also an effect of obtaining a passivation layer having gentle slope on the surface and avoiding a broken wire trouble of aluminum wiring.

REFERENCES:
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4356623 (1982-11-01), Hunter
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4404733 (1983-09-01), Sasaki
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4507853 (1985-04-01), McDavid
patent: 4586968 (1986-05-01), Coello-Vera
patent: 4593454 (1986-06-01), Baudrant et al.
patent: 4603472 (1986-08-01), Schwabe et al.
patent: 4616401 (1986-10-01), Takeuchi
patent: 4641420 (1987-02-01), Lee
Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, New York, N.Y., 1983, pp. 493-495 & 582-585.

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