Manufacturing method of flash memory device comprising gate...

Details Manufacturing method of flash memory device comprising gate... Manufacturing method of flash memory device comprising gate...

2011-01-11

2011-01-11

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S287000, C438S288000, C438S588000, C257S324000, C257S331000, C257SE29309

Reexamination Certificate

active

07867831

ABSTRACT:
A flash memory device includes a substrate, a cell stack having a semiconductor layer, in which junction areas for setting areas therebetween to channel areas are formed in a shape of a stripe, and an interlayer isolation layer for insulating the semiconductor layer, wherein the semiconductor layer and the interlayer isolation layer are repeatedly stacked. The flash memory device further includes an array of gate columns penetrating through the cell stack, perpendicular to the substrate and cutting through the junction areas to dispose the junction areas at both sides thereof, and a trap layered stack introduced into an interface between the gate column and the cell stack to store charge.

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