Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2009-02-10
2009-11-24
Ghyka, Alexander G (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S381000, C257SE21008
Reexamination Certificate
active
07621970
ABSTRACT:
An capacitor element is fabricated by winding an anode foil having a dielectric oxide film formed thereon, and a cathode foil subjected to a treatment of enlarging surface area in a manner that a separator is interposed therebetween. The capacitor element is immersed in a fluid dispersion containing conductive polymer fine particles dispersed therein. Thereafter, it is depressurized and dried so that the conductive polymer fine particles adhere to surfaces of fibers of the separator, fill between the fibers of the separator, and adhere to surfaces of the anode foil and the cathode foil in a manner that the adhesion and filling of the conductive polymer fine particles are such that an amount of the fine particles decreases from ends toward a center of the capacitor element. Then, it is impregnated with an electrolytic solution.
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International Search Report for PCT/JP2007/066834.
Furusawa Shigetaka
Matsuura Hiroyuki
Ghyka Alexander G
Nikmanesh Seahvosh J
Panasonic Corporation
Pearne & Gordon LLP
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