Manufacturing method of electrode

Details Manufacturing method of electrode Manufacturing method of electrode

1996-09-30

1999-01-12

Trinh, Michael

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438 3, 438240, 438253, 438653, H01L 218242

Patent

active

058588515

ABSTRACT:
A titanium film and a titanium nitride film are sequentially formed on a polysilicon plug. Next, the titanium nitride film is oxidized to form an oxidized titanium nitride film. Thereafter, a lower electrode and a PZT film are formed. A diffusion barrier layer is prepared from the oxidized titanium nitride film and is oxidized before the lower electrode is formed. As a result, unlike in prior art, the diffusion barrier layer is not oxidized after the lower electrode is formed. Peel-off between the diffusion barrier layer and the lower electrode due to the oxidation is thus prevented.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5418388 (1995-05-01), Okudaira et al.
patent: 5523595 (1996-06-01), Takenaka et al.
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5593914 (1997-01-01), Evans, Jr. et al.
patent: 5618746 (1997-04-01), Hwang
patent: 5663088 (1997-09-01), Sandhu et al.
patent: 5753527 (1998-05-01), Itoh et al.

Affiliated with

Also associated with

Rating

Manufacturing method of electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1515067