Manufacturing method of double spacer structure for mixed-mode I

Details Manufacturing method of double spacer structure for mixed-mode I Manufacturing method of double spacer structure for mixed-mode I

1997-12-12

1999-10-12

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, H01L 21302

Patent

active

059654643

ABSTRACT:
A method for forming a double spacer structure comprising the steps of first providing a semiconductor substrate that has a first gate and a second gate already formed thereon, wherein the gate length of the second gate is greater than the gate length of the first gate. Then, a first insulating layer is formed over the substrate and the gates. Next, a photoresist layer is formed over the first insulating layer above the second gate while exposing the first insulating layer above the first gate. Subsequently, a first etching operation is performed to establish a first spacer structure along the sidewalls of the first gate, and then the photoresist layer is removed leaving the first insulating layer over the second gate. Thereafter, a second insulating layer is formed over the substrate, the first gate and the first insulating layer, and then a second etching operation is performed to establish a second spacer structure along the sidewalls of the second gate. Therefore, a second spacer that has a width greater than the first spacer does is finally obtained.

REFERENCES:
patent: 4775642 (1988-10-01), Chang et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5296410 (1994-03-01), Yang
patent: 5620919 (1997-04-01), Godinho et al.
patent: 5641698 (1997-06-01), Lin
patent: 5683932 (1997-11-01), Bashir et al.

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