Manufacturing method of composite sheet material using...

Semiconductor device manufacturing: process – Laser ablative material removal

Reexamination Certificate

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C257SE21596

Reexamination Certificate

active

07122489

ABSTRACT:
A patterned, multi-layered thin film structure is patterned using ultra-fast lasers and absorption spectroscopy without damaging underlying layers of the layered structure. The structure is made by selecting ablatable layers based on their thermal, strength and absorption spectra and by using an ultra-fast laser programmed with the appropriate wavelength (λ), pulse width (τ), spectral width (Δλ), spot size, bite size and fluence. The end structure may have features (such as vias, insulating areas, or inkjet printed areas) patterned in the last (top) layer applied or at deeper layers within the layered structure, and can be used as components of organic light emitting didoes (OLEDs) and organic thin film transistors (OTFTs). The method of the present invention includes determining the product's specifications, providing a substrate, selecting a layer, applying the layer, patterning the layer and determining if more layers need to be added to the multi-layered thin film structure.

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patent: 2003/0022107 (2003-01-01), Yang et al.

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