Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2011-07-19
2011-07-19
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S455000, C438S458000, C257SE21567, C257SE21568, C257SE21570
Reexamination Certificate
active
07981754
ABSTRACT:
To provide a manufacturing method of a semiconductor substrate and a manufacturing method of a semiconductor device, which prevent reduction in breakdown voltage of a gate oxide film of a device formed in a semiconductor substrate to improve a reliability of the gate oxide film. A manufacturing method of a semiconductor substrate according to the present invention includes: exposing a silicon surface of an active layer substrate1made of single-crystal silicon, to which a semiconductor device is formed; forming an oxide film on a support substrate2made of single-crystal silicon; and bonding the silicon surface of the active layer substrate1to the oxide film formed on the support substrate2. The silicon surface of the active layer substrate1is exposed by removing a spontaneous oxidation film7formed on the surface.
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Taiwan Official Action—096130105—Apr. 6, 2011.
Nguyen Khiem D
Renesas Electronics Corporation
Young & Thompson
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