Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1998-10-29
2000-10-31
Niebling, John F.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
361523, 361529, H01G 900, H01G 9042
Patent
active
061395935
ABSTRACT:
A manufacturing method of an anode body of a solid electrolytic capacitor which, for improving the embedded strength of the anode lead with reduced leakage current, successively throws two kinds of valve action metallic powders with different melting-down properties into a single-step press manufacturing die so as to be arranged with the valve action metallic powder whose melting-down property is larger in the neighborhood of the embedded surface of the anode lead.
REFERENCES:
patent: 4468719 (1984-08-01), Shimizu et al.
patent: 4517727 (1985-05-01), Shimizu et al.
patent: 4574333 (1986-03-01), Snyder
patent: 5486977 (1996-01-01), Hasegawa
patent: 5667536 (1997-09-01), Hasegawa
NEC Corporation
Nguyen Ha Tran
Niebling John F.
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