Manufacturing method of a thin-film transistor

Details Manufacturing method of a thin-film transistor Manufacturing method of a thin-film transistor

1997-07-02

1999-09-14

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438151, 438158, 257 72, 257506, H01L 21306, H01L 2184

Patent

active

059535830

ABSTRACT:
A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by carrying out etching by the use of the source electrode and drain electrode as direct masks or by the use of a resist pattern that was used for forming the respective electrodes. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

REFERENCES:
patent: 4680086 (1987-07-01), Thomas et al.
patent: 4778560 (1988-10-01), Takeda et al.
patent: 5017984 (1991-05-01), Tanaka et al.
patent: 5036370 (1991-07-01), Miyago et al.
patent: 5109260 (1992-04-01), Tanaka et al.
patent: 5352907 (1994-10-01), Matsuda et al.
patent: 5585647 (1996-12-01), Nakajima et al.
patent: 5736434 (1998-04-01), Konuma et al.
patent: 5831694 (1996-06-01), Onisawa et al.
S. M. Sze, VLSI Technology, pp.221-226, 1988.
Stanley Wolf and Richard N. Tauber, silicon Processing for the VLSI Era, pp.539-581, 1986.

Affiliated with

Also associated with

Rating

Manufacturing method of a thin-film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of a thin-film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a thin-film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1519507