Manufacturing method of a silicon carbide semiconductor device

Details Manufacturing method of a silicon carbide semiconductor device Manufacturing method of a silicon carbide semiconductor device

2008-05-20

2011-12-06

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S196000, C438S197000, C438S198000, C438S570000, C438S583000, C438S584000, C438S597000, C438S652000, C438S688000, C438S689000, C438S691000, C438S700000, C438S706000, C438S735000, C438S736000, C438S739000, C438S767000, C438S931000, C257S077000, C257S078000, C257S081000, C257S103000, C257S471000, C257S486000, C257S594000, C257S750000, C257SE21159, C257SE21215

Reexamination Certificate

active

08071482

ABSTRACT:
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.

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