Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2011-01-11
2011-01-11
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21134, C257SE21413, C257SE21415
Reexamination Certificate
active
07867873
ABSTRACT:
A method of manufacturing a semiconductor substrate is demonstrated, which enables the formation of a single crystal semiconductor layer on a substrate having an insulating surface. The manufacturing method includes the steps of: ion irradiation of a surface of a single-crystal semiconductor substrate to form a damaged region; laser light irradiation of the single-crystal semiconductor substrate; formation of an insulating layer on the surface of the single-crystal semiconductor substrate; bonding the insulating layer with a substrate having an insulating surface; separation of the single-crystal semiconductor substrate at the damaged region, resulting in a thin single-crystal semiconductor layer on the surface of the substrate having the insulating surface; and laser light irradiation of the surface of the single-crystal semiconductor layer which is formed on the substrate having the insulating surface. This method allows the production of a thin layer of a single-crystal semiconductor with uniformed characteristics on an insulating surface.
REFERENCES:
patent: 5223080 (1993-06-01), Ohta et al.
patent: 5374564 (1994-12-01), Bruel
patent: 6176922 (2001-01-01), Aklufi et al.
patent: 6271101 (2001-08-01), Fukunaga
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6548370 (2003-04-01), Kasahara et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: 6803264 (2004-10-01), Yamazaki et al.
patent: 6803296 (2004-10-01), Miyairi
patent: 6875633 (2005-04-01), Fukunaga
patent: 6887650 (2005-05-01), Shimoda et al.
patent: 7050387 (2006-05-01), Tsujita et al.
patent: 7119365 (2006-10-01), Takafuji et al.
patent: 7148124 (2006-12-01), Usenko
patent: 7176525 (2007-02-01), Fukunaga
patent: 7199024 (2007-04-01), Yamazaki
patent: 7338913 (2008-03-01), Kasahara et al.
patent: 2003/0203656 (2003-10-01), Kasahara et al.
patent: 2004/0038505 (2004-02-01), Ito et al.
patent: 2004/0224449 (2004-11-01), Yamazaki et al.
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0042798 (2005-02-01), Nagao et al.
patent: 2006/0068563 (2006-03-01), Wong et al.
patent: 2007/0108510 (2007-05-01), Fukunaga
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0184632 (2007-08-01), Yamazaki et al.
patent: 2007/0281440 (2007-12-01), Cites et al.
patent: 2008/0261376 (2008-10-01), Yamazaki et al.
patent: 11-163363 (1999-06-01), None
patent: 2000-294754 (2000-10-01), None
patent: 2001-127304 (2001-05-01), None
patent: 2005-203596 (2005-07-01), None
patent: 2005-252244 (2005-09-01), None
Godo Hiromichi
Isobe Atsuo
Murakami Satoshi
Jones Eric W
Le Thao X
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Manufacturing method of a semiconductor substrate using a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method of a semiconductor substrate using a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a semiconductor substrate using a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2637771