Manufacturing method of a semiconductor device with a trench cap

Details Manufacturing method of a semiconductor device with a trench cap Manufacturing method of a semiconductor device with a trench cap

1993-02-16

1994-04-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437164, 437919, H01L 2170

Patent

active

053025415

ABSTRACT:
A semiconductor device includes a second insulator layer (12) a first conductor layer (13) and a second insulator layer (14) stacked in this order on a semiconductor substrate (11), and a trench (15) formed to penetrate the stacked triple layer and extend into the semiconductor substrate. A capacitor is formed at a portion of the trench located in the semiconductor substrate. A transistor is formed directly on this capacitor. The capacitor has one electrode formed of the semiconductor substrate and the other electrode formed of a second conductor layer (18) formed in the trench to open a dielectric film (17). The transistor includes a gate electrode formed of the first conductor layer and source/drain regions (20, 21) of a second conductivity type distributed in the vicinity of the first and second insulator layers in an active layer (19) filling the trench. The drain and source regions of the transistor are formed by thermally diffusing impurities included in the first and second insulator layers into the active layer. Since a region to be added only for isolation is unnecessary in this semiconductor device and a manufacture method thereof, a memory cell area can be reduced, resulting in higher integration of the device.

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IBM Technical Disclosure Bulletin, "New Vertical Stacked-Transistor Substrate-Plate Trench Cell and Fabrication Process Therefore," vol. 32, No. 38 (Aug., 1989), pp. 177-182.
Richardson et al, "A Trench Transistor Cross-Point DRAM Cell," IEDM 85, 1985, pp. 714-717.

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