Manufacturing method of a semiconductor device utilizing thin me

Details Manufacturing method of a semiconductor device utilizing thin me Manufacturing method of a semiconductor device utilizing thin me

1993-05-25

1995-01-17

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437229, 437928, 1566591, 148DIG17, 148DIG105, H01L 21283, H01L 213205

Patent

active

053825446

ABSTRACT:
A semiconductor device is manufactured using the electron beam exposure method. A resist is applied on an interlayer dielectric film through a thin metal film, and a contact hole is formed in the interlayer dielectric film. The thin metal film is utilized as a part of a second metal wiring pattern after removing its surface oxides.

REFERENCES:
patent: 4612275 (1986-09-01), Gregor
patent: 5139922 (1992-08-01), Watanabe et al.

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