Manufacturing method of a semiconductor device to suppress...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

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C438S611000, C029S827000, C257S772000, C257SE23031, C257SE23053

Reexamination Certificate

active

07547581

ABSTRACT:
It is suppressed that a whisker occurs on a lead for external connection.A lead for external connection is formed of the alloy (42Alloy) of Fe and Ni, and a plating film which includes alloy of Sn and Cu is formed on the surface. Next, using a heat-treat furnace, the heat treatment at the temperature beyond melting-point T0of the plating film is performed, and the plating film is melted. At this time, the temperature beyond T0is held for 20 seconds or more. The grain boundary of the plating film can be vanished by the above-mentioned heat treatment. Hereby, the internal stress of the plating film can be eased, and the generation of the whisker can be suppressed.

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Selective Plating for Surface-Mounted Component Lead, Sep. 1986, IBM Techinical Disclosure Bulletin, vol. 29,pp. 1652-1653.

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