Manufacturing method of a semiconductor device

Details Manufacturing method of a semiconductor device Manufacturing method of a semiconductor device

2006-01-24

2006-01-24

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S015000, C438S112000, C438S750000, C430S312000

Reexamination Certificate

active

06989334

ABSTRACT:
The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

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