Manufacturing method of a quantum device

Details Manufacturing method of a quantum device Manufacturing method of a quantum device

1995-12-19

1997-07-01

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437105, 437126, 437129, H01L 2120

Patent

active

056438281

ABSTRACT:
A method of manufacturing a quantum device such as a coupled quantum boxes device are disclosed. The quantum device comprises: a semiconductor substrate; a plurality of box portions made of a first semiconductor; and a layer made of a second semiconductor provided on circumferences of the box portions, a plurality of quantum boxes being provided with the box portions and the layer of the second semiconductor. The manufacturing method comprises the steps of: making a plurality of box portions of a first semiconductor on a semiconductor substrate; and covering circumferences of the box portions with a layer of a second semiconductor, a plurality of quantum boxes being provided with the box portions and the layer of the second semiconductor.

REFERENCES:
patent: 5313484 (1994-05-01), Arimoto
Fukai et al in "Appl. Phys. Letts 58(18) 1991 (May), pp. 2018-2020" titled GaAs Tetrahedral Quantum Dot Structures . . . .
Japanese Journal of Applied Physics, Conf. Solid State Devices and Materials 1990 entitled "Fabrication and Optical Characterization of InGaAs/InP Quantum Wires and Dots", pp. 107-110.

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