Manufacturing method of a photoelectric conversion device

Details Manufacturing method of a photoelectric conversion device Manufacturing method of a photoelectric conversion device

2011-05-03

2011-05-03

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C438S525000, C438S595000, C257SE21345, C257SE21346

Reexamination Certificate

active

07935557

ABSTRACT:
A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.

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