Manufacturing method of a diamond emitter vacuum micro device

Etching a substrate: processes – Forming or treating an article whose final configuration has...

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216 54, 20419222, 445 24, 445 50, H01J 902, B44C 122, C23C 1434

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06103133&

ABSTRACT:
The present invention intends to provide a manufacturing method of a vacuum micro device, including the steps of forming diamond nuclei on a substrate, forming emitters by etching the substrate with use of the diamond nuclei as a mask, forming an insulating layer and a gate electrode layer as a gate electrode on the emitters, such that the insulating layer and the gate electrode layer are stacked in order, and exposing the diamond nuclei by partially etching the gate electrode layer and the insulating layer.

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Hirohiko Murakami, et al., IUMRS-ICA-97 Abstracts, pp. 334, Sep. 16-18, 1997, "Fabrication of 50-nm SI Spikes Topped with Diamond Particles: New Field Emitters?"

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