Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-07-22
2008-07-22
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S238000
Reexamination Certificate
active
07402455
ABSTRACT:
The method forms a phase change memory cell with a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.
REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6238946 (2001-05-01), Ziegler
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6512241 (2003-01-01), Lai
patent: 6541333 (2003-04-01), Shukuri et al.
patent: 6545287 (2003-04-01), Chiang
patent: 6586761 (2003-07-01), Lowrey
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6750079 (2004-06-01), Lowrey et al.
patent: 6943365 (2005-09-01), Lowrey et al.
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2003/0075778 (2003-04-01), Klersy
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2003/0231530 (2003-12-01), Bez et al.
patent: 2004/0011381 (2004-01-01), Klebanoff et al.
patent: 2004/0012009 (2004-01-01), Casagrande et al.
patent: 2004/0166604 (2004-08-01), Ha et al.
patent: 2004/0245603 (2004-12-01), Lowrey et al.
patent: WO 00/57498 (2000-09-01), None
patent: WO 02/09206 (2002-01-01), None
Palun, L., et al., “Fabrication of Single Electron Devices by Hybrid (E-Beam/DUV) Lithography,”Microelectronic Engineering53:167-170, 2000.
U.S. Appl. No. 09/276,273, filed Mar. 25, 1999, Klersy.
Pellizzer Fabio
Pirovano Agostino
Iannucci Robert
Jorgenson Lisa K.
Ovonyx Inc.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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