Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Patent
1996-10-01
1998-04-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
438666, H01L 218242
Patent
active
057417393
ABSTRACT:
The present invention disclosed a structure of a charge storage electrode the and manufacturing method therefor. The present invention features forming initial oxide pattern(s) having viscous property at certain temperatures on a barrier layer as rectangular bar-shaped pattern(s) and applying heat to the oxide pattern(s) to transform the initial oxide pattern(s) to cylindrical oxide pattern(s); depositing polysilicon layer on the cylindrical oxide pattern(s); etching each end of the portions of the polysilicon layer and removing the oxide pattern(s); so as to provide a charge storage electrode structure having at least one conduit(s) which is formed with a polysilicon. The charge storage electrode structure according to the present invention has an increased effective surface area and is manufactured by a relatively simple method facilitating the manufacture of highly integrated semiconductor device.
REFERENCES:
patent: 4859615 (1989-08-01), Tsukamoto et al.
patent: 5238862 (1993-08-01), Black et al.
patent: 5374580 (1994-12-01), Baglee et al.
patent: 5427972 (1995-06-01), Shimizu et al.
Cho Sung Chun
Yoo Kyung Dong
Chaudhari Chandra
Hyundai Electronics Industries Co,. Ltd.
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