Manufacturing method of a Bi-MIS semiconductor device

Details Manufacturing method of a Bi-MIS semiconductor device Manufacturing method of a Bi-MIS semiconductor device

1988-08-18

1990-12-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437100, 437233, 148DIG9, 148DIG72, 148DIG148, 357 43, H01L 21441

Patent

active

049803034

ABSTRACT:
With a trend toward higher operation speed and higher gain of a Bi-MIS semiconductor device, wherein a bipolar transistor and a MIS FET are formed on the same silicon substrate, a wide bandgap material such as silicon carbide or micro-crystalline silicon is utilized as an emitter material of the bipolar transistor and further a gate electrode of the MIS FET is simultaneously formed using the same wide bandgap material. By applying the above method in the manufacturing of the Bi-MIS semiconductor device, a high amplification factor of the bipolar transistor and a high cutoff frequency of the MIS FET thereof can be easily obtained without additional processes.

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