Manufacturing method for semiconductor unit

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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438 69, 438116, 438124, 438126, 438127, 26427217, H01L 2152, H01L 2156, H01L 2158, H01L 2160

Patent

active

058937234

ABSTRACT:
A manufacturing method for a semiconductor unit which is capable of reducing the generation of a camber of a base member and enhancing reliability in operation. The method comprises the steps of: preparing a lead frame having an outer lead portion and an inner lead portion; preparing an upper mold and a lower mold for forming a cavity; holding the outer lead portion of the lead frame between the upper mold and the lower mold, and injecting molten resin in a cavity formed between the upper and lower molds and hardening the resin, thereby forming a base member having a recessed portion at its approximately central portion and a frame portion which surrounds the outside of an opening portion of the recessed portion and holds the inner lead portion of the lead frame between the base member and the frame portion; mounting a semiconductor device in the recessed portion, and connecting the semiconductor device to the inner lead of the lead frame; and potting a translucent resin in the recessed portion for sealing the semiconductor device.

REFERENCES:
patent: 3622419 (1971-11-01), London
patent: 4318939 (1982-03-01), Wong
patent: 4675767 (1987-06-01), Osato et al.
patent: 4888449 (1989-12-01), Crane et al.
patent: 5008065 (1991-04-01), Okumura et al.
patent: 5043211 (1991-08-01), Yoshizumi et al.
patent: 5070041 (1991-12-01), Katayama et al.
patent: 5179284 (1993-01-01), Kingsley et al.
patent: 5244692 (1993-09-01), Zagdoun et al.
patent: 5366806 (1994-11-01), Fujiki et al.
patent: 5474828 (1995-12-01), Kouyama et al.
patent: 5554569 (1996-09-01), Ganesan et al.

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