Manufacturing method for semiconductor storage device

Details Manufacturing method for semiconductor storage device Manufacturing method for semiconductor storage device

1991-08-28

1992-12-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437 45, 437 52, 437228, 437235, H01L 2170

Patent

active

051697971

ABSTRACT:
The present invention provides a manufacturing method for a semiconductor storage device, in which data are written by implanting impurity ions onto a channel area of a memory cell transistor, which comprises the steps of: a step for forming a gate electrode using a high melting point metal over the surface of a semiconductor substrate, and for forming an oxide film on the surface of the gate electrode; a step for forming a film on the area for forming a data confirmation pattern; and a step for forming the data confirmation pattern on the film in performing etching in the film at a high selection ratio for the above-mentioned oxide film with a mask to be used for ion implantation for ROM data.

REFERENCES:
patent: 4282646 (1981-08-01), Fortino et al.
patent: 4295209 (1981-10-01), Donley et al.
patent: 4364165 (1982-12-01), Dickman et al.
patent: 4364167 (1982-12-01), Donley

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