Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-04-19
2011-04-19
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S171000, C438S584000, C438S768000, C257SE21079, C257SE21168
Reexamination Certificate
active
07927914
ABSTRACT:
The invention provides a manufacturing method for a semiconductor photoelectrochemical cell, comprising the steps of burning a base made of titanium or a titanium alloy in an atmosphere of 700° C. to 1000° C. at a rate of temperature increase of no lower than 5° C./second so that a titanium oxide layer is formed on the surface, and thus, mixing titanium metal into said titanium oxide layer.
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Nakagawa Yoshinori
Wada Kiyohisa
Knobbe Martens Olson & Bear LLP
Lee Cheung
Shiken Co., Ltd.
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