Manufacturing method for semiconductor laser with mesa stripe

Details Manufacturing method for semiconductor laser with mesa stripe Manufacturing method for semiconductor laser with mesa stripe

1988-09-21

1989-05-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 372 45, 372 46, H01L 21306, H01S 318

Patent

active

048351172

ABSTRACT:
There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

REFERENCES:
patent: 3865646 (1975-02-01), Logan et al.
patent: 4184170 (1980-01-01), Burnham et al.
patent: 4213805 (1980-07-01), Tsukada
patent: 4602371 (1986-07-01), Kawano et al.
patent: 4644551 (1987-02-01), Kawano et al.
Applied Physics Letters, vol. 47, No. 10, Nov. 1985, ppp. 1027-1028, by M. Ikeda et al, "Room-Temperature Continuous-wave Operation of an AlGaInP Double Heterostructure Laser Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition".
Electronics Letters, vol. 21, No. 23, 7 Nov. 1985, pp. 1084-1085, "CW Operation at 10.degree. C. for InGaAlP Visible Light Laser Diodes Grown by MOCVD", M. Ishikawa et al.

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