Manufacturing method for semiconductor integrated circuit device

Details Manufacturing method for semiconductor integrated circuit device Manufacturing method for semiconductor integrated circuit device

1995-03-01

1996-04-30

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 34, 437 51, 437 59, 437200, 437247, 148DIG147, H01L 21265

Patent

active

055125026

ABSTRACT:
In forming a MISFET having a salicide structure, a polysilicon film forming a gate electrode in the MISFET is constructed of a first silicon film having a high n-type impurity concentration on the side of a gate insulating film and a second silicon film having a low n-type impurity concentration on the surface side of the gate electrode. Further, a Ti film is deposited on the second silicon film. The Ti film and the second silicon film are annealed twice at proper different temperatures to thereby promote a silicide reaction and form a low-resistance silicide layer in the second silicon film.

REFERENCES:
patent: 4774204 (1988-09-01), Havemann
patent: 5081066 (1992-01-01), Kim
patent: 5192992 (1993-03-01), Kim et al.
patent: 5341014 (1994-08-01), Fujii et al.

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