Manufacturing method for semiconductor devices with source/drain

Details Manufacturing method for semiconductor devices with source/drain Manufacturing method for semiconductor devices with source/drain

1993-01-27

1995-02-21

Fourson, George

Fishing, trapping, and vermin destroying

437 35, 437 36, 437 38, H01L 21265, H01L 2906, H01L 2176

Patent

active

053915062

ABSTRACT:
A projection is formed in a substrate by anisotropic etching and a transistor is contained in the projection. The central portion of the projection covered with a gate electrode is formed as a channel region, and drain and source regions are formed on both sides of the projection by oblique ion implantation with the gate electrode as a mask. Formed below the drain, source, and channel regions is an element isolation section having the composition of the substrate intact. This eliminates the need for an oxide insulating layer below the transistor for easy manufacturing. Carriers generated in the channel region by ionization by collision can also be discharged to the substrate.

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