Manufacturing method for semiconductor devices, and...

Semiconductor device manufacturing: process – Semiconductor substrate dicing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S014000, C438S017000, C438S462000, C438S463000

Reexamination Certificate

active

07629228

ABSTRACT:
On a mask placement-side surface of a semiconductor wafer in which a plurality of semiconductor devices are formed, a mask is placed, while dicing lines for dicing the semiconductor wafer into the respective separate semiconductor devices are defined and a surface of a flawed semiconductor device among the respective semiconductor devices is partially exposed, and then plasma etching is applied to the mask placement-side surface of the semiconductor wafer so as to dice the semiconductor wafer into the respective semiconductor devices along the defined dicing lines, and an exposed portion of the flawed semiconductor device is removed so as to form a removed portion as a flawed semiconductor device distinguishing mark.

REFERENCES:
patent: 5633173 (1997-05-01), Bae
patent: 6605479 (2003-08-01), Pasadyn et al.
patent: 2004/0137700 (2004-07-01), Sekiya
patent: 63-261843 (1988-10-01), None
patent: 02-305450 (1990-12-01), None
patent: 07-283179 (1995-10-01), None
patent: 2000-124270 (2000-04-01), None
patent: 2000-340527 (2000-12-01), None
patent: 2002-273884 (2002-09-01), None
patent: 03/071591 (2003-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacturing method for semiconductor devices, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for semiconductor devices, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for semiconductor devices, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4087997

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.