Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2005-08-01
2009-12-08
Tran, Minh-Loan T (Department: 2895)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S014000, C438S017000, C438S462000, C438S463000
Reexamination Certificate
active
07629228
ABSTRACT:
On a mask placement-side surface of a semiconductor wafer in which a plurality of semiconductor devices are formed, a mask is placed, while dicing lines for dicing the semiconductor wafer into the respective separate semiconductor devices are defined and a surface of a flawed semiconductor device among the respective semiconductor devices is partially exposed, and then plasma etching is applied to the mask placement-side surface of the semiconductor wafer so as to dice the semiconductor wafer into the respective semiconductor devices along the defined dicing lines, and an exposed portion of the flawed semiconductor device is removed so as to form a removed portion as a flawed semiconductor device distinguishing mark.
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Arita Kiyoshi
Haji Hiroshi
Nishinaka Teruaki
Panasonic Corporation
Sun Yu-Hsi
Tran Minh-Loan T
Wenderoth , Lind & Ponack, L.L.P.
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