Manufacturing method for semiconductor devices

Details Manufacturing method for semiconductor devices Manufacturing method for semiconductor devices

2009-02-25

2011-11-15

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21547

Reexamination Certificate

active

08058139

ABSTRACT:
A polysilazane perhydride solution, prepared by dispensing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).

REFERENCES:
patent: 5747623 (1998-05-01), Matsuo et al.
patent: 2005/0026443 (2005-02-01), Goo et al.
patent: 1257529 (2000-06-01), None
patent: 7-2511 (1995-01-01), None
patent: 08-112879 (1996-05-01), None
patent: 2001-89126 (2001-04-01), None
patent: 2001-308090 (2001-11-01), None
patent: 2002-367980 (2002-12-01), None
patent: 2004-273519 (2004-09-01), None
patent: 2004-363595 (2004-12-01), None
patent: 2005-45230 (2005-02-01), None
patent: 2005-116706 (2005-04-01), None
patent: 2006-222220 (2006-08-01), None
patent: 2006-253310 (2006-09-01), None
patent: 2007-27697 (2007-02-01), None
patent: 2007-165724 (2007-06-01), None
patent: WO 99/03926 (1999-01-01), None

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