Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2007-05-08
2010-02-02
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S041000
Reexamination Certificate
active
07655490
ABSTRACT:
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.
REFERENCES:
patent: 6091083 (2000-07-01), Hata et al.
patent: 6266355 (2001-07-01), Sverdlov
patent: 7078814 (2006-07-01), Stamper
patent: 2004/0219702 (2004-11-01), Nagai et al.
patent: 2006/0166486 (2006-07-01), Stamper
patent: 11-074621 (1999-03-01), None
patent: 3201475 (2001-06-01), None
patent: 2002-009341 (2002-01-01), None
patent: 02/080242 (2002-10-01), None
English language Abstract of JP 11-74621.
English language Abstract of JP 2002-9341.
Greenblum & Bernstein P.L.C.
Panasonic Corporation
Smith Bradley K
LandOfFree
Manufacturing method for semiconductor device, semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for semiconductor device, semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for semiconductor device, semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4150213