Manufacturing method for semiconductor device, semiconductor...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation

Reexamination Certificate

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C438S041000

Reexamination Certificate

active

07655490

ABSTRACT:
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.

REFERENCES:
patent: 6091083 (2000-07-01), Hata et al.
patent: 6266355 (2001-07-01), Sverdlov
patent: 7078814 (2006-07-01), Stamper
patent: 2004/0219702 (2004-11-01), Nagai et al.
patent: 2006/0166486 (2006-07-01), Stamper
patent: 11-074621 (1999-03-01), None
patent: 3201475 (2001-06-01), None
patent: 2002-009341 (2002-01-01), None
patent: 02/080242 (2002-10-01), None
English language Abstract of JP 11-74621.
English language Abstract of JP 2002-9341.

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