Manufacturing method for semiconductor device, semiconductor...

Details Manufacturing method for semiconductor device, semiconductor... Manufacturing method for semiconductor device, semiconductor...

2007-06-12

2007-06-12

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S096000, C372S045013

Reexamination Certificate

active

10921913

ABSTRACT:
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.

REFERENCES:
patent: 6266355 (2001-07-01), Sverdlov
patent: 7078814 (2006-07-01), Stamper
patent: 2006/0166486 (2006-07-01), Stamper
patent: 10102126 (1998-06-01), None
patent: 19652543 (2002-08-01), None
patent: 59121183 (1984-07-01), None
patent: 11-074621 (1999-03-01), None
patent: 3201475 (2001-06-01), None
patent: 2002-009341 (2002-01-01), None
English language Abstract of JP 11-74621.
English language Abstract of JP 2002-9341.

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