Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-06-05
2007-06-05
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021
Reexamination Certificate
active
10954649
ABSTRACT:
A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.
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Nemoto Yoshihiko
Tanida Kazumasa
Umemoto Mitsuo
Rabin & Berdo PC
Renesas Technology Corp.
Rohm & Co., Ltd.
Sanyo Electric Co,. Ltd.
Sarkar Asok Kumar
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