Manufacturing method for semiconductor device and...

Details Manufacturing method for semiconductor device and... Manufacturing method for semiconductor device and...

2011-01-25

2011-01-25

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

07875527

ABSTRACT:
A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.

REFERENCES:
patent: 5981356 (1999-11-01), Hsueh et al.
patent: 6750117 (2004-06-01), Hung et al.
patent: 2008/0057672 (2008-03-01), Rossi et al.
patent: 2000-21967 (2000-01-01), None

Affiliated with

Also associated with

Rating

Manufacturing method for semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2624562