Coating processes – Electrical product produced – Condenser or capacitor
Patent
1980-01-07
1982-03-23
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
156643, 156653, 156657, 427 90, 427 93, 427 94, 427 96, 430314, H01L 2188
Patent
active
043212840
ABSTRACT:
A method for manufacturing semiconductor devices having a multi-layer wiring interconnection structure wherein a first interconnection wiring metal layer is formed on a semiconductor substrate followed by the formation of layers of silicon nitride on portions wherein patterns are to be placed and forming a layer of silicon oxide over the layer of silicon nitride. Selective portions of the silicon oxide layer are removed by lightly etching the layer to form recesses around the wiring portions of the metal layer. The silicon nitride layer is then removed and an insulating layer is formed on the surface from which the silicon nitride layer was removed. Through-holes are formed in predetermined portions of the insulating layer through which contact is made to a second wiring metal layer disposed over the insulating layer.
REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 3844831 (1974-10-01), Cass et al.
patent: 3976524 (1976-08-01), Feng
patent: 4025411 (1977-05-01), Hom-Ma et al.
patent: 4045594 (1977-08-01), Maddocks
patent: 4070501 (1978-01-01), Corbin et al.
patent: 4076575 (1978-02-01), Chang
patent: 4123565 (1978-10-01), Sumitomo et al.
patent: 4172004 (1979-10-01), Alcorn et al.
patent: 4174251 (1979-11-01), Pashke
patent: 4184909 (1980-01-01), Chang et al.
Smith John D.
Vlsi Technology Research Association
LandOfFree
Manufacturing method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1650926