Manufacturing method for semiconductor device

Details Manufacturing method for semiconductor device Manufacturing method for semiconductor device

2008-08-29

2010-10-19

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S698000

Reexamination Certificate

active

07816160

ABSTRACT:
The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.

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