Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2002-09-05
2004-09-14
Zarneke, David A. (Department: 2827)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S462000, C438S465000, C438S976000
Reexamination Certificate
active
06790705
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor apparatus, and more particularly to a method for manufacturing a semiconductor apparatus whereby a divisible multi-segment base material is formed and severed at predetermined cutting positions to obtain separate semiconductor apparatuses.
2. Description of the Related Art
A semiconductor apparatus is typically produced by severing a divisible multi-segment base material on which a multiplicity of semiconductor chips are mounted, at predetermined cutting positions.
With reference to
FIGS. 8A through 8C
,
9
A, and
9
B, a semiconductor apparatus of conventional design will be described below.
FIGS. 8A through 8C
are a plan view, a front view, and a bottom view, respectively, each showing a divisible multi-segment base material.
FIG. 9A
is an enlarged view showing a section D depicted in FIG.
8
A.
FIG. 9B
is an enlarged view showing a section E depicted in FIG.
8
C.
On a top-surface side of a substrate
90
is formed a wiring pattern (not shown) having mounted thereon a multiplicity of semiconductor chips (not shown). The wiring pattern has its surface sealed with resin
92
, and also the semiconductor chips, together with the resin
92
, are sealed with upper resin
92
b
. The wiring pattern and the semiconductor chips are electrically connected to each other by a gold wire (not shown).
On a back-surface side of the substrate
90
is formed a terminal portion
93
which is given plating so as to pair up with each of the semiconductor chips. In the terminal portion
93
is formed a terminal hole
931
to establish external electrical connection.
In this way, the divisible multi-segment base material
9
is obtained by forming the wiring pattern including a multiplicity of semiconductor chips on the substrate
90
, followed by providing the terminal portion
93
thereon.
Next, with reference to
FIGS. 8A through 8C
,
9
A,
9
B,
10
A,
10
B, and
11
A through
11
C, a detailed description will be given below as to a process for dividing the above-described divisible multi-segment base material
9
into separate semiconductor apparatuses
91
.
FIGS. 10A and 10B
are views each showing a process step for producing the semiconductor apparatus
91
.
FIGS. 11A through 11C
are a plan view, a front view, and a bottom view, respectively, each showing the semiconductor apparatus
91
in finished form. Note that the “cutting line” shown in
FIGS. 8A through 8C
and
FIG. 9A
represents a cutting position at which the base material
9
is severed with a dicing machine provided with a blade
9
a
as shown in FIG.
9
B.
The base material
9
shown in
FIG. 10A
is severed by moving the blade
9
a
, provided in the dicing machine, along the cutting line covering the terminal hole
931
. By being severed along the cutting line, the divisible multi-segment base material
9
is cut into pieces, thus producing a multiplicity of semiconductor apparatuses
91
as shown in
FIGS. 11A through 11C
. Note that, as shown in
FIGS. 10B
,
11
B, and
11
C, the terminal hole
931
is left exposed along the cut surface of each of the separate semiconductor apparatuses
91
.
However, a multiplicity of semiconductor apparatuses
91
thus produced suffer from the following drawbacks. Since the base material
9
is severed along the cutting line covering the terminal hole
93
, the plating applied to the terminal hole
931
inconveniently comes off, resulting in burrs being developed. Occurrence of burrs in the terminal hole
931
leads to soldering failure, or causes short circuits between the terminals.
Furthermore, where the blade provided in the dicing machine is so designed as to perform 1-line cutting at one time (hereafter such a blade is referred to as the “single-type blade
9
b
”), the number of cutting process steps is increased. As a method to reduce the number of cutting process steps, it is known to use a blade capable of cutting a plurality of lines at one time (hereafter such a blade is referred to as the “multiple-type blade
9
c
”) for severing the base material
9
.
FIG. 12A
is a view showing a state in which the base material
9
is being severed by the single-type blade
9
b
, and
FIG. 12B
is a view showing a state in which the base material
9
is being severed by the multiple-type blade
9
c
. As shown in
FIGS. 12A and 12B
, the multiple-type blade
9
c
is made 10 times as thick as the single-type blade
9
b
. For example, if the thickness of the single-type blade is assumed to be 0.1 to 0.2 mm, the multiple-type blade has a thickness of approximately 2 mm.
In the multiple-type blade
9
c
, though a plurality of lines can be cut at one time, a heavier load is required for cutting than in the case of performing cutting line by line. For this reason, the multiple-type blade
9
c
is made larger in thickness than the single-type blade
9
b
. Since a limitation is imposed on a range of selection of surface particle sizes for the multiple-type blade
9
c
, the multiple-type blade
9
c
is disadvantageous in terms of burr amount compared to the single-type blade
9
b.
SUMMARY OF THE INVENTION
To solve the above-described problems, an object of the invention is to provide a semiconductor apparatus manufacturing method by which burrs can be prevented from being produced along a cut surface of a terminal portion at the time of severing a base material.
The invention provides a semiconductor apparatus manufacturing method comprising the steps of:
forming a divisible multi-segment base material by mounting a multiplicity of semiconductor chips on a top-surface side of a substrate having a wiring pattern, followed by sealing the semiconductor chips with resin, further followed by attaching terminal portions each having a terminal hole to a back-surface side of the substrate; and
severing the base material at a position covering the terminal hole in such a way that the base material is divided into separate semiconductor apparatuses,
wherein, after formation of the base material, a filler is charged in each of the terminal holes, then the base material is severed after curing the filler, and lastly the filler filled in each of the terminal holes is removed.
According to the invention, after formation of the base material, a filler is charged in each of the terminal holes. Then, the base material is severed after curing the filler. With this method, even if a multiple-type blade is used, it is possible to prevent burrs from being produced along the cut surface of the terminal portion at the time of severing the base material. Moreover, the filler used to prevent occurrence of burrs is removed just after the severing, thus leaving no unnecessary components in the semiconductor apparatus.
In the invention, it is preferable that the filler contains a water-soluble substance.
According to the invention, the filler, containing a water-soluble substance, can be readily removed from the semiconductor apparatus with use of water.
In the invention, it is preferable that the water-soluble substance consists of barium hydroxide or polyvinyl alcohol.
In the invention, it is preferable that the filler contains an alkali-strippable substance.
According to the invention, the filler, containing an alkali-strippable substance, can be readily removed from the semiconductor apparatus with use of alkaline aqueous solution.
In the invention, it is preferable that the filler contains a thermosetting substance or an ultraviolet cure substance.
In the invention, it is preferable that the terminal hole is formed by drilling a plurality of continuous holes.
According to the invention, since the terminal hole is formed by drilling a plurality of continuous holes, its hole diameter is made larger than that of a terminal hole consisting of a single hole. As a result, even if the position at which the base material is severed is so located as to be deviated to the cutout-portion side with respect to a predetermined cutting position, the base material can be cut into separate semicond
Kitanishi Shigenori
Nishi Toshiharu
Oka Junji
Conlin David G.
Edwards & Angell LLP
Jensen Steven M.
Sharp Kabushiki Kaisha
Zarneke David A.
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