Manufacturing method for membrane lithography mask with mask fie

Details Manufacturing method for membrane lithography mask with mask fie Manufacturing method for membrane lithography mask with mask fie

1998-03-17

1999-08-10

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, G03F 900

Patent

active

059357398

ABSTRACT:
The invention relates to a manufacturing method for a membrane mask suitable for particle beams with mask fields, which are bounded by thin support walls.
The deep plasma etching for the formation of the support walls is halted shortly before reaching the membrane and the last .mu.m before the membrane removed by wet-chemical etching. A high etch selectivity can be achieved using an alkaline etching solution.
The support walls 1 are turned by 45.degree. to the (110) direction or oriented parallel to the (100) plane, so that the structures restricted by (111) planes are avoided.

REFERENCES:
patent: 5178977 (1993-01-01), Yamada
patent: 5270125 (1993-12-01), America
patent: 5795684 (1998-08-01), Troccolo
patent: 5798194 (1998-08-01), Nakasuji

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