Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1997-10-24
1999-03-02
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, G03F 900
Patent
active
058768815
ABSTRACT:
Methods are disclosed for manufacturing masks for charged-particle-beam (CPB) or X-ray transfer. The masks have substantially no pattern defects. In a representative method for making stencil masks, the mask is defined using multiple subfields each having a respective pattern of voids. The subfields are separated from each other by boundary regions lacking any pattern features. The boundary regions include supports to provide the mask with physical and thermal stability. The supports are formed by an etching step in which relatively large amounts of substrate are removed. In the methods, the mask pattern is formed, inspected, and "repaired" as required before performing the etching step that forms the supports. Thus, the forming, inspection, and repair steps can be performed before the mask is made too delicate.
REFERENCES:
patent: 5115456 (1992-05-01), Kimura et al.
patent: 5260151 (1993-11-01), Bergerr et al.
patent: 5728492 (1998-03-01), Kawata
Behringer et al., "Repair Techniques for Silicon Transmission Masks Used for Submicron Lithography," J. Vac. Sci. Technol. B4:94-99 (Mar. 1986).
Bohlen et al., "Electron-Beam Proximity Printing-A New High-Speed Lithography Method for Submicron Structures," IBM J. Res. Develop. 26:568-579 (Mar. 1982).
Nikon Corporation
Rosasco S.
LandOfFree
Manufacturing method for mask for charged-particle-beam transfer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for mask for charged-particle-beam transfer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for mask for charged-particle-beam transfer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-420950