Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Sidewall base contact
Patent
1996-11-27
1999-01-05
Niebling, John
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Sidewall base contact
438350, 438367, 438368, 438375, 438555, 438564, 148DIG10, 148DIG11, 257554, 257588, 257518, H01L 21331
Patent
active
058562281
ABSTRACT:
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.
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patent: 5403757 (1995-04-01), Suzuki
Anmo Hiroaki
Ejiri Hirokazu
Gomi Takayuki
Kanematsu Shigeru
Kato Katsuyuki
Niebling John
Pham Long
Sony Corporation
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