Manufacturing method for making bipolar device

Fishing – trapping – and vermin destroying

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437141, 437150, 437162, 437186, 437191, 437193, 437195, 437200, 148DIG10, 148DIG11, H01L 21265

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056438060

ABSTRACT:
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.

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patent: 5403757 (1995-04-01), Suzuki et al.

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