Manufacturing method for light emitting device

Details Manufacturing method for light emitting device Manufacturing method for light emitting device

2010-12-15

2011-12-06

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C438S462000

Reexamination Certificate

active

08071464

ABSTRACT:
A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing laser processing for the sapphire substrate layer and next applying an external force to a processed locus formed along each division line by the above laser processing to thereby divide the light emitting device wafer into a plurality of light emitting devices. The sapphire layer of each light emitting device has side surfaces whose horizontal sectional shape is a corrugated shape. Accordingly, the number of total reflections on the side surfaces of the sapphire layer can be reduced to thereby achieve efficient emergence of light from the sapphire layer.

REFERENCES:
patent: 6902990 (2005-06-01), Gottfried et al.
patent: 2007/0176181 (2007-08-01), Kusunoki
patent: 10-056203 (1998-02-01), None
patent: 10-305420 (1998-11-01), None
patent: 2002-192370 (2002-07-01), None

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