Manufacturing method for LDDFETS using oblique ion implantion te

Details Manufacturing method for LDDFETS using oblique ion implantion te Manufacturing method for LDDFETS using oblique ion implantion te

1989-04-03

1993-12-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21336

Patent

active

052702260

ABSTRACT:
By symmetrically forming source and drain regions to the gate electrodes, electrically symmetrical transistor characteristics are obtained. After forming the first source and drain regions by large-tilt-angle ion implantation, without a sidewall in the gate electrode or after forming a sidewall shorter than the distance in the lateral direction of the second source and drain regions from the end of the mask for ion implantation, the diffusion of the second source and drain regions in the lateral direction is restricted to the maximum extent by heat treatment for a short time, and then the end of the gate electrode and the end of the second source and drain regions are matched, or their overlap region is formed. As a result, the manufacturing method of the MOS transistor results in both high performance and high reliability.

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