Metal working – Piezoelectric device making
Patent
1988-10-07
1990-01-02
Hall, Carl E.
Metal working
Piezoelectric device making
156651, 310320, 427100, 437 54, 437228, H01L 4122
Patent
active
048903701
ABSTRACT:
A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.
REFERENCES:
patent: 3912563 (1975-10-01), Tomioka et al.
patent: 4556812 (1985-12-01), Kline et al.
Ariyoshi Hisashi
Fukuda Susumu
Kasanami Toru
Hall Carl E.
Murata Manufacturing Co. Ltd.
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