Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-07-12
2011-07-12
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S109000, C438S615000, C257S686000, C257SE21510, C257SE21515, C257SE21519, C228S175000, C228S193000, C228S203000, C228S212000
Reexamination Certificate
active
07977158
ABSTRACT:
A manufacturing method for an electronic device joining a first metallic bond part formed on a first electronic component and a second metallic bond part formed on a second electronic component includes a first process for placing the first metallic bond part directly against the second metallic bond part, applying pressure to the first electronic component and the second electronic component, joining the first metallic bond part to the second metallic bond part with solid-phase diffusion, and releasing the applied pressure, and a second process for heating the first electronic component and the second electronic component at a predetermined temperature such that the first metallic bond part and the second metallic bond part are joined together by melting the first metallic bond part and the second metallic bond part.
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McGinn IP Law Group PLLC
Renesas Electronics Corporation
Wilczewski Mary
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