Manufacturing method for double-side capacitor of stack DRAM

Details Manufacturing method for double-side capacitor of stack DRAM Manufacturing method for double-side capacitor of stack DRAM

2011-06-14

2011-06-14

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S397000, C257SE21008

Reexamination Certificate

active

07960241

ABSTRACT:
A manufacturing method for double-side capacitor of stack DRAM has steps of: forming a sacrificial structure in the isolating trench and the capacitor trenches; forming a first covering layer and a second covering layer on the sacrificial structure; modifying a part of the second covering layer; removing the un-modified second covering layer and the first covering layer to expose the sacrificial structure; removing the exposed part of the sacrificial structure to expose the electrode layer; removing the exposed electrode layer to expose the oxide layer; and removing the oxide layer and sacrificial structure to form the double-side capacitors.

REFERENCES:
patent: 5399415 (1995-03-01), Chen et al.
patent: 5683945 (1997-11-01), Penner et al.
patent: 7078307 (2006-07-01), Lin et al.
patent: 7087497 (2006-08-01), Yuan et al.
patent: 7358188 (2008-04-01), Basceri
patent: 7449383 (2008-11-01), Yoon et al.
patent: 7776706 (2010-08-01), Cheng et al.
patent: 7781279 (2010-08-01), Tsai et al.
patent: 2003/0222296 (2003-12-01), Kumar et al.
patent: 2004/0005762 (2004-01-01), Bonart et al.
patent: 2004/0036095 (2004-02-01), Brown et al.
patent: 2005/0032324 (2005-02-01), Kudelka et al.
patent: 2005/0054159 (2005-03-01), Manning et al.
patent: 2005/0077563 (2005-04-01), Alsmeier
patent: 2006/0014344 (2006-01-01), Manning
patent: 2007/0066056 (2007-03-01), Kim et al.
patent: 2008/0061340 (2008-03-01), Heineck et al.
patent: 2008/0081431 (2008-04-01), Roh et al.
patent: 2008/0164582 (2008-07-01), Govindarajan
patent: 2008/0305605 (2008-12-01), Cheng et al.
patent: 2009/0004808 (2009-01-01), Lee et al.
patent: 2009/0184392 (2009-07-01), Cheng et al.
patent: 2009/0242954 (2009-10-01), Chou
patent: 2009/0278225 (2009-11-01), Pyi
patent: 2009/0286377 (2009-11-01), Manning

Affiliated with

Also associated with

Rating

Manufacturing method for double-side capacitor of stack DRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for double-side capacitor of stack DRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for double-side capacitor of stack DRAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2655914