Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2007-07-03
2007-07-03
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
Reexamination Certificate
active
10927441
ABSTRACT:
It is the object of the present invention to provide a manufacturing method for a compound semiconductor device capable of removing remaining organic substances without deteriorating a characteristic of the compound semiconductor device, wherein a surface of an i-type AlGaAs schottky layer is cleaned in a state where light is blocked using either one of ozonized (O3) water whose ozone concentration is at most 13 mg/L and hydrogenated (H2) water whose hydrogen ion concentration (pH) is from 6 to 8 inclusive, or using both of the ozonized water and the hydrogenated water after a schottky electrode made of Ti/Al/Ti is evaporated onto the exposed i-type AlGaAs schottky layer and a lift-off operation is performed using a remover.
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“Novel Photoresist Stripping Technology Using Ozone/Vaproized Water Mixture”, Hitoshi Abe, Hayato Iwamoto, Takayuki, Tadashi Iino, and Glenn W. Gale; IEEE Transactions on Semiconductor Manufacturing, vol. 16, No. 3, Aug. 2003.
Kato Yoshiaki
Tamura Akiyoshi
Yamaguchi Tuneo
Lebentritt Michael
Matsushita Electric - Industrial Co., Ltd.
Stevenson Andre′
Wenderoth , Lind & Ponack, L.L.P.
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