Fishing – trapping – and vermin destroying
Patent
1988-02-04
1989-01-24
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437162, 437911, 357 22, H01L 21385, H01L 2980
Patent
active
048001724
ABSTRACT:
A method for manufacturing cascaded junction type field effect transistors comprises the steps of forming an epitaxial layer of a first conductivity type used as a channel region on a semiconductor substrate of a second conductivity type and performing selective oxidation to form a thick oxide film on part of the epitaxial layer. Then, the thick oxide film is removed to provide a part of the surface which is a level lower than the main surface of the epitaxial layer. Next, an impurity of the first conductivity type is doped into the low and high surface areas of the epitaxial layer from the surface thereof to form source and drain regions separated at a preset distance. After this, an impurity of the second conductivity type is doped into the low and high level surface areas of the epitaxial layer between the source and drain regions to simultaneously form first and second junction gates which are separated at a present distance. Then, the semiconductor substrate is connected to the second junction gate and source region to connect two junction FETs in cascade fashion.
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Matsumoto Kiyohito
Okano Jun-ichi
Chaudhuri Olik
Kabushiki Kaisha Toshiba
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