Manufacturing method for bipolar transistor

Details Manufacturing method for bipolar transistor Manufacturing method for bipolar transistor

1992-10-23

1994-06-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG10, 257588, H01L 21265, H01L 2970

Patent

active

053246721

ABSTRACT:
A bipolar transistor including a semiconductor layer formed on a semiconductor substrate; a base region formed at an upper portion of the semiconductor layer; a graft base region formed at the upper portion of the semiconductor layer so as to connect with a periphery of the base region; an emitter region formed at an upper portion of the base region; an offset insulating film formed on the base region around the emitter region; a collector buried region formed in the semiconductor layer below the base region; a collector drawn region formed in the semiconductor layer so as to connect with the collector buried region and be arranged on the side of the base region adjacent to an element isolating region; an emitter electrode formed on the offset insulating film so as to connect with the emitter region; an emitter insulating film formed so as to cover the emitter electrode; a base electrode formed so as to connect with the graft base region and contact with the emitter insulating film; and a collector electrode formed so as to connect with the collector drawn region.

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