Radiation imagery chemistry: process – composition – or product th – Transfer procedure between image and image layer – image... – Diffusion transfer process – element – or identified image...
Patent
1996-09-27
1998-08-04
Niebling, John
Radiation imagery chemistry: process, composition, or product th
Transfer procedure between image and image layer, image...
Diffusion transfer process, element, or identified image...
438234, 438309, 438320, 438339, 438366, 148DIG9, H01L 218238
Patent
active
057892857
ABSTRACT:
In a BiMOS semiconductor device, emitter and base electrodes formed by polycrystalline Si of a bipolar transistor are isolated from each other by way of a sidewall and an insulator layer. As this insulator layer acts as an offset during the formation of the sidewall, its layer thickness can be made larger. Further, as this insulator layer is not provided in a MOS region, its step can be made smaller. Consequently, parasitic capacitance can be reduced while the insulator layer can be made thicker. Thus, there can be achieved both fast operation and high reliability of the bipolar transistor and, moreover, reduction in the reliability of a MOS transistor can also be prevented.
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Kananen Ronald P.
Niebling John
Pham Long
Sony Corporation
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